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Proceedings Paper

Application of inorganic resists in high-density information storage technologies
Author(s): Ivan Z. Indutnyi; Sergey A. Kostyukevych; Victor Ivanovitch Minko; Peter E. Shepeljavi; Alexander V. Stronski
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Paper Abstract

In this work the questions of applications of chalcogenide glasses (CG) and the structures on their base in the technology of optical disks are considered. In brief are described the properties of high resolution inorganic thin film structures CG-Ag and CG layers. The peculiarities of laser lithography on such resists under the influence of sharp focused laser irradiation with the objective of formation of master disks and the tracking guides of optical disks were investigated. It is shown that under laser exposure the local heating of the resist and also the photostructural transformations, activated by this heating, provide the narrowing of the lines of the resistive mask in comparison to the size of the exposure light spot. Using the As2S3 layers the minimal width of lines 0.17 micrometers was obtained, under the exposure wavelength 476 nm and laser spot halfwidth 1 micrometers . This enables us to decrease the period of the tracking guides with the purpose of increasing the density of information recording. The possibility is shown of the formation of the tracking guides structure with the period up to the 0.6 micrometers . The thermosensitive structure CG-In(Sn) is developed for the nonerasable information recording by the irradiation of the semiconductor laser. The recording is carried out due to thermostimulated interaction between CG layers and metal, that leads to the substantial changes of the reflection coefficient. The media is characterized by the acceptable sensitivity, high contrast, and sufficient storage time.

Paper Details

Date Published: 17 February 1995
PDF: 12 pages
Proc. SPIE 2451, Advanced Image and Video Communications and Storage Technologies, (17 February 1995); doi: 10.1117/12.201227
Show Author Affiliations
Ivan Z. Indutnyi, Institute of Semiconductor Physics (Ukraine)
Sergey A. Kostyukevych, Institute of Semiconductor Physics (Ukraine)
Victor Ivanovitch Minko, Institute of Semiconductor Physics (Ukraine)
Peter E. Shepeljavi, Institute of Semiconductor Physics (Ukraine)
Alexander V. Stronski, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 2451:
Advanced Image and Video Communications and Storage Technologies
Naohisa Ohta; Heinz U. Lemke; Jean Claude Lehureau, Editor(s)

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