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Proceedings Paper

Silylation and dry development of three component resists for half-micron lithography
Author(s): Thierry G. Vachette; Patrick Jean Paniez; Michel Madore
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Paper Abstract

The study of the SAL 601 shows that E-Beam exposure induces selectivity in the diffusion of silylating agents. Two different mechanisms are responsible for silicon incorporation. The HMDS diffusion and reaction in the novolak matrix have been studied as a function of the thermal properties of the polymer. Two main silylation processes have been found by the modification of silicon incorporation mechanisms versus the silylation temperature. Different silylation tools and etchers have been tested in order to achieve correct patterns. Mask formation and grass phenomena have been studied and a model with aggregates formation has been developed. Silicon incorporation into the three different component resists has been studied versus the main silylation parameters. Submicron patterns have been achieved for different processes. This paper demonstrates that three component resists can be silylated by the use of different silylation processes and are good candidates for half-micron lithography.

Paper Details

Date Published: 1 June 1990
PDF: 15 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20120
Show Author Affiliations
Thierry G. Vachette, European Silicon Structures, Z.I. (France)
Patrick Jean Paniez, CNET-CNS (France)
Michel Madore, European Silicon Structures, Z (France)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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