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Proceedings Paper

Silylation processes for 193-nm excimer laser lithography
Author(s): Mark A. Hartney; Roderick R. Kunz; Daniel J. Ehrlich; David C. Shaver
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Paper Abstract

A silylation process for novolac-based resins was developed which results in positive-tone imaging. This process is based on 193nminduced crosslinking followed by a low temperature silylation step. Novolac resin without diazoquinone additives may also be used as positive-tone resists. Typical conditions were exposure to dimethylsilyldimethylainine vapor at 10 Torr for 1 minute at 100 °C. This incorporates silicon in the upperniost 100 to 1000 nn of the film, depending on the resist. Etch selectivities in a 10 rnTorr oxygen reactive ion etching plasma with a bias voltage of -200 V were typically 30:1. Resolution below 0.3 m has been demonstrated with this technique.

Paper Details

Date Published: 1 June 1990
PDF: 12 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20119
Show Author Affiliations
Mark A. Hartney, Lincoln Lab./MIT (United States)
Roderick R. Kunz, Lincoln Lab./MIT (United States)
Daniel J. Ehrlich, Lincoln Lab./MIT (United States)
David C. Shaver, Lincoln Lab./MIT (United States)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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