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Proceedings Paper

Study of EUV outgassing spatial distribution toward witness plate in the EUV outgas tester
Author(s): Yukiko Kikuchi; Eishi Shiobara; Hiroyuki Tanaka; Isamu Takagi; Kazuhiro Katayama; Norihiko Sugie; Toshiya Takahashi; Soichi Inoue; Takeo Watanabe; Tetsuo Harada; Hiroo Kinoshita
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Paper Abstract

In the experiments to evaluate outgassing of EUV resists, it was found that the amount of PAG anion and/or Fluorine observed on the witness sample (WS) was different for the variety of WS location and direction in the testing chamber. The XPS measurements showed there were about 10 times of Fluorine atoms on the WS which were put to face the exposing position of the resist on the wafer compared to that were put to turn the back on the wafer. As the Fluorine is the component of photo-acid-generator (PAG) of resists used in the experiments, it is thought that the PAG anion and/or its decomposed species have high sticking coefficient to the WS. The simulation was performed to understand the directivity of outgassing from the exposing point, using the Direct Simulation Monte Carlo (DSMC) method. The results indicated that the sticking coefficient of PAG anion is about 0.8, suggesting that the position and direction of WS in the chamber relative to the wafer strongly affects the amounts of deposition of the species having big sticking coefficients.

Paper Details

Date Published: 1 April 2013
PDF: 9 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86790M (1 April 2013); doi: 10.1117/12.2011709
Show Author Affiliations
Yukiko Kikuchi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Eishi Shiobara, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hiroyuki Tanaka, EUVL Infrastructure Development Ctr., Inc. (Japan)
Isamu Takagi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Kazuhiro Katayama, EUVL Infrastructure Development Ctr., Inc. (Japan)
Norihiko Sugie, EUVL Infrastructure Development Ctr., Inc. (Japan)
Toshiya Takahashi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Soichi Inoue, EUVL Infrastructure Development Ctr., Inc. (Japan)
Takeo Watanabe, Univ. of Hyogo (Japan)
Tetsuo Harada, Univ. of Hyogo (Japan)
Hiroo Kinoshita, Univ. of Hyogo (Japan)

Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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