One of the key challenges to high resolution resist patterning is pattern collapse. Using a new scanning probe microscopy (SPM), Peak Force^TM tapping, we map nano-mechanical properties-- modulus, adhesion, and dissipation-- of the exposed/developed resist structures with sub-10 nm resolution. Properties are compared across a carbon based negative resist with and without cross-linking. The SPM technique reveals that cross-linking significantly enhances the mechanical properties to give a champion resolution of sub 20 nm half-pitch in a chemically amplified negative resist system. Beyond mechanical properties, surface morphology and redistribution kinetics were examined using complementary techniques and reveal additional benefits with cross-linking.

Date Published: 18 April 2013
PDF: 11 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86810O (18 April 2013); doi: 10.1117/12.2011657

Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)