Proceedings Paper
Impact of EUV mask roughness on lithography performance| Format | Member Price | Non-Member Price |
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Paper Abstract
The influence of surface roughness of an EUV mask on wafer image has been thoroughly investigated by lithography
simulation with the Monte Carlo method. Based on the power spectral density of the surface roughness of an actual mask,
and based on a given random phase distribution, we have reconstructed a number of rough surfaces with various rms
roughness values. We quantitatively estimated the impacts of these reconstructed rough surfaces on wafer images.
Furthermore, we also investigated the influence of phase defects formed on the rough surfaces. We then did the process
margin analysis that showed the specifications of the surface roughness.
Paper Details
Date Published: 1 April 2013
PDF: 11 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792S (1 April 2013); doi: 10.1117/12.2011635
Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)
PDF: 11 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792S (1 April 2013); doi: 10.1117/12.2011635
Show Author Affiliations
Yukiyasu Arisawa, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuneo Terasawa, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuneo Terasawa, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)
Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)
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