Pattern customization is a necessary requirement to achieve circuit-relevant patterns using block copolymer directed self-assembly (DSA), but the edge-placement error associated with customization steps after DSA is anticipated to be at the scale of the pattern features, particularly as a result of overlay error. Here we present a new self-aligned approach to the customization of line-space patterns fabricated through chemical epitaxy. A partially inorganic chemical pattern contains a prepattern with pinning lines and non-guiding “blockout” features to which the block copolymer domains are aligned. Pattern transfer results in a line-space pattern with self-aligned customizations directly determined by the prepattern. In the transferred pattern, pinning lines determine the placement of single-line gaps while blockout features determine the placement and size of perpendicular trim across lines. By using designed two-dimensional chemical patterns, this self-aligned, bidirectional customization scheme enables the fabrication of high-resolution circuit-relevant patterns with fewer trim/exposure steps.

Date Published: 26 March 2013
PDF: 8 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 86800Y (26 March 2013); doi: 10.1117/12.2011629

Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)