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Proceedings Paper

Fabrication of 28nm pitch Si fins with DSA lithography
Author(s): Gerard Schmid; Richard Farrell; Ji Xu; Chanro Park; Moshe Preil; Vidhya Chakrapani; Nihar Mohanty; Akiteru Ko; Michael Cicoria; David Hetzer; Mark Somervell; Benjamen Rathsack
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Paper Abstract

Directed Self-Assembly (DSA), as an extension of current state-of-the-art photolithography, has demonstrated the capability for patterning with resolution and cost effectiveness beyond the capability of other techniques. Previous studies of DSA have reported encouraging benchmarks in defect density and throughput capability for the patterning step, and such results provide a foundation for our ongoing efforts to integrate the DSA patterning step into a robust process for fabricating device layers. Here we provide a status report on the integration of two chemoepitaxy DSA patterning methods for the fabrication of 28nm pitch Si fin arrays. In addition to the requirements for a robust pattern transfer process, it is also important to understand the pattern design limitations that are associated with DSA. We discuss some of the challenges and opportunities associated with developing efficient device designs that take advantage of the capabilities of DSA.

Paper Details

Date Published: 26 March 2013
PDF: 12 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 86801F (26 March 2013); doi: 10.1117/12.2011607
Show Author Affiliations
Gerard Schmid, GLOBALFOUNDRIES, Inc. (United States)
Richard Farrell, GLOBALFOUNDRIES, Inc. (United States)
Ji Xu, GLOBALFOUNDRIES, Inc. (United States)
Chanro Park, GLOBALFOUNDRIES, Inc. (United States)
Moshe Preil, GLOBALFOUNDRIES, Inc. (United States)
Vidhya Chakrapani, Tokyo Electron Technology Ctr., America, LLC (United States)
Nihar Mohanty, Tokyo Electron Technology Ctr., America, LLC (United States)
Akiteru Ko, Tokyo Electron Technology Ctr., America, LLC (United States)
Michael Cicoria, Tokyo Electron Technology Ctr., America, LLC (United States)
David Hetzer, Tokyo Electron Technology Ctr., America, LLC (United States)
Mark Somervell, Tokyo Electron America, Inc. (United States)
Benjamen Rathsack, Tokyo Electron America, Inc. (United States)

Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)

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