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Proceedings Paper

Resist outgassing contamination growth results using both photon and electron exposures
Author(s): Gregory Denbeaux; Yudhishthir Kandel; Genevieve Kane; Diego Alvardo; Mihir Upadhyaya; Yashdeep Khopkar; Alexander Friz; Karen Petrillo; Jaewoong Sohn; Chandra Sarma; Dominic Ashworth
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Paper Abstract

During exposure in an EUV scanner, photoresist and other materials coated on a wafer are known to outgas various species. As a requirement to pattern materials in an ASML NXE scanner, these materials need to be screened for outgassing and possible optics contamination. As part of the testing process, a resist-coated wafer is exposed in a vacuum chamber mimicking the conditions inside an EUV scanner. The resist exposure source can be either EUV photons or electron beam (e-beam). This presentation will cover the results to date on a SEMATECH program to study resist outgassing from both the commercial system from EUV Tech and a custom Resist Outgassing and Exposure (ROX) tool. The EUV Tech results reported will be based on electron exposures of the photoresist, and the ROX results reported will be based on EUV photon exposures of the photoresist. The results reported will cover both tools and the measurements of over 80 commercial photoresists.

Paper Details

Date Published: 1 April 2013
PDF: 8 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86790L (1 April 2013); doi: 10.1117/12.2011606
Show Author Affiliations
Gregory Denbeaux, Univ. at Albany (United States)
Yudhishthir Kandel, Univ. at Albany (United States)
Genevieve Kane, Univ. at Albany (United States)
Diego Alvardo, Univ. at Albany (United States)
Mihir Upadhyaya, Univ. at Albany (United States)
Yashdeep Khopkar, Univ. at Albany (United States)
Alexander Friz, SEMATECH Inc. (United States)
Karen Petrillo, SEMATECH Inc. (United States)
Jaewoong Sohn, SEMATECH Inc. (United States)
Chandra Sarma, SEMATECH Inc. (United States)
Dominic Ashworth, SEMATECH Inc. (United States)

Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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