In this paper, we will describe some of our efforts on various leaving group designs and their impacts on resist performance, mainly focusing on the leaving group polarity, activation energy and molecular volume. The EUV lithographic performances of the newly designed leaving groups are evaluated on a standard methacrylate polymer bound photoacid generator (PBP) platform. With our low activation energy and hydrophobic leaving group PBP, we report good line and space and contact hole performance using the Albany eMET and LBNL BMET tool.

Date Published: 1 April 2013
PDF: 11 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867907 (1 April 2013); doi: 10.1117/12.2011600

Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)