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Proceedings Paper

15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU
Author(s): K. Xu; L. Souriau; D. Hellin; J. Versluijs; P. Wong; D. Vangoidsenhoven; N. Vandenbroeck; H. Dekkers; X. P. Shi; J. Albert; C. L. Tan; J. Vertommen; B. Coenegrachts; I. Orain; Y. Kimura; V. Wiaux; W. Boullart
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Paper Abstract

This paper discusses the approach for patterning 15nm Half Pitch (HP) structures using EUV lithography combined with Self-Aligned Double Patterning (SADP). A stack composed of a double hard mask, which allows decoupling photoresist transfer and trim, and an α-Si mandrel, which offers better mechanical properties during the mandrel and spacer patterning, is proposed. A break-down study with the patterning steps was performed to investigate the key contributors for improvement of LWR, LER and CDU, targeting integrated solutions with lithography, etch, thin film deposition, and wet cleans for selected applications. Based on the optimization of these key patterning contributors, optimum LWR, LER and CDU at 15nm HP are demonstrated.

Paper Details

Date Published: 29 March 2013
PDF: 10 pages
Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850C (29 March 2013); doi: 10.1117/12.2011586
Show Author Affiliations
K. Xu, IMEC (Belgium)
L. Souriau, IMEC (Belgium)
D. Hellin, Lam Research Corp. (Belgium)
J. Versluijs, IMEC (Belgium)
P. Wong, IMEC (Belgium)
D. Vangoidsenhoven, IMEC (Belgium)
N. Vandenbroeck, IMEC (Belgium)
H. Dekkers, IMEC (Belgium)
X. P. Shi, IMEC (Belgium)
J. Albert, IMEC (Belgium)
C. L. Tan, IMEC (Belgium)
J. Vertommen, Lam Research Corp. (Belgium)
B. Coenegrachts, Lam Research Corp. (Belgium)
I. Orain, Lam Research Corp. (United States)
Y. Kimura, Lam Research Corp. (United States)
V. Wiaux, IMEC (Belgium)
W. Boullart, IMEC (Belgium)

Published in SPIE Proceedings Vol. 8685:
Advanced Etch Technology for Nanopatterning II
Ying Zhang; Gottlieb S. Oehrlein; Qinghuang Lin, Editor(s)

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