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Proceedings Paper

Multifunctional hardmask neutral layer for directed self-assembly (DSA) patterning
Author(s): Douglas J. Guerrero; Mary Ann Hockey; Yubao Wang; Eric Calderas
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Paper Abstract

Micro-phase separation for directed self-assembly (DSA) can be executed successfully only when the substrate surface on which the block co-polymer (BCP) is coated has properties that are ideal for attraction to each polymer type. The neutral underlayer (NUL) is an essential and critical component in DSA feasibility. Properties conducive for BCP patterning are primarily dependent on “brush” or “crosslinked” random co-polymer underlayers. Most DSA flows also require a lithography step (reflection control) and pattern transfer schemes at the end of the patterning process. A novel multifunctional hardmask neutral layer (HM NL) was developed to provide reflection control, surface energy matching, and pattern transfer capabilities in a grapho-epitaxy DSA process flow. It was found that the ideal surface energy for the HM NL is in the range of 38-45 dyn/cm. The robustness of the HM NL against exposure to process solvents and developers was identified. Process characteristics of the BCP (thickness, bake time and temperature) on the HM NL were defined. Using the HM NL instead of three distinct layers – bottom anti-reflective coating (BARC) and neutral and hardmask layers – in DSA line-space pitch tripling and contact hole shrinking processes was demonstrated. Finally, the capability of the HM NL to transfer a pattern into a 100-nm spin-on carbon (SOC) layer was shown.

Paper Details

Date Published: 26 March 2013
PDF: 9 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 86801P (26 March 2013); doi: 10.1117/12.2011567
Show Author Affiliations
Douglas J. Guerrero, Brewer Science, Inc. (United States)
Mary Ann Hockey, Brewer Science, Inc. (United States)
Yubao Wang, Brewer Science, Inc. (United States)
Eric Calderas, Brewer Science, Inc. (United States)

Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)

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