Proceedings Paper
Patterning at 6.5 nm wavelength using interference lithography| Format | Member Price | Non-Member Price |
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Paper Abstract
We present the results of patterning chemically-amplified and inorganic resists at 6.5 nm wavelength using interference lithography. Well-resolved patterns down to 22 nm HP are obtained. Dose-dependent line-edge roughness and critical dimensions in the resolution range of 50-22 nm half-pitch are obtained using 13.5 and 6.5 nm wavelength. The performances of the resists are compared for both cases. Increased line-edge roughness is observed for patterning 6.5 nm compared to the patterning at 13.5 nm wavelength.
Paper Details
Date Published: 1 April 2013
PDF: 7 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867924 (1 April 2013); doi: 10.1117/12.2011556
Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)
PDF: 7 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867924 (1 April 2013); doi: 10.1117/12.2011556
Show Author Affiliations
Nassir Mojarad, Paul Scherrer Institute (Switzerland)
Michaela Vockenhuber, Paul Scherrer Institute (Switzerland)
Li Wang, Paul Scherrer Institute (Switzerland)
Michaela Vockenhuber, Paul Scherrer Institute (Switzerland)
Li Wang, Paul Scherrer Institute (Switzerland)
Bernd Terhalle, Paul Scherrer Institute (Switzerland)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)
Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)
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