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Proceedings Paper

High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements
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Paper Abstract

Immersion lithography is being extended to the 20-nm and 14-nm node and the lithography performance requirements need to be tightened further to enable this shrink. In this paper we present an integral method to enable high-order fieldto- field corrections for both imaging and overlay, and we show that this method improves the performance with 20% - 50%. The lithography architecture we build for these higher order corrections connects the dynamic scanner actuators with the angle resolved scatterometer via a separate application server. Improvements of CD uniformity are based on enabling the use of freeform intra-field dose actuator and field-to-field control of focus. The feedback control loop uses CD and focus targets placed on the production mask. For the overlay metrology we use small in-die diffraction based overlay targets. Improvements of overlay are based on using the high order intra-field correction actuators on a field-tofield basis. We use this to reduce the machine matching error, extending the heating control and extending the correction capability for process induced errors.

Paper Details

Date Published: 12 April 2013
PDF: 13 pages
Proc. SPIE 8683, Optical Microlithography XXVI, 86831J (12 April 2013); doi: 10.1117/12.2011550
Show Author Affiliations
Jan Mulkens, ASML Netherlands B.V. (Netherlands)
Michael Kubis, ASML Netherlands B.V. (Netherlands)
Paul Hinnen, ASML Netherlands B.V. (Netherlands)
Roelof de Graaf, ASML Netherlands B.V. (Netherlands)
Hans van der Laan, ASML Netherlands B.V. (Netherlands)
Alexander Padiy, ASML Netherlands B.V. (Netherlands)
Boris Menchtchikov, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 8683:
Optical Microlithography XXVI
Will Conley, Editor(s)

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