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Proceedings Paper

Study of overlay in EUV/ArF mix and match lithography
Author(s): Chin-Chou Kevin Huang; Lin Chua; KyungBae Hwang; Antonio Mani; Gino Marcuccilli; Bill Pierson; Ramkumar Karur-Shanmugam; John C. Robinson; Dongsub Choi; Michael Ferber; Klaus-Dieter Roeth; ByoungHoon Lee; Inhwan Lee
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Paper Abstract

In preparation for EUV lithography (EUVL) in high volume manufacturing, a preproduction ASML NXE:3100 step-and- scan system was used to assess overlay performance under mix-and-match between EUV and ArF lithography, which will be critical for the successful insertion of EUV lithography into high volume 1x node production. Overlay sources of variation associated with EUV were investigated, including mask pattern-placement error (PPE), scan direction, and processing order. Furthermore, this study also looks into overlay control strategy development specifically for EUV/ArF mix-and-match lithography. Systematic and random overlay components will be discussed, as well as possible overlay modeling and control options.

Paper Details

Date Published: 18 April 2013
PDF: 12 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86811O (18 April 2013); doi: 10.1117/12.2011510
Show Author Affiliations
Chin-Chou Kevin Huang, KLA-Tencor Corp. (United States)
Lin Chua, KLA-Tencor Corp. (United States)
KyungBae Hwang, KLA-Tencor Corp. (United States)
Antonio Mani, KLA-Tencor Corp. (United States)
Gino Marcuccilli, KLA-Tencor Corp. (United States)
Bill Pierson, KLA-Tencor Corp. (United States)
Ramkumar Karur-Shanmugam, KLA-Tencor Corp. (United States)
John C. Robinson, KLA-Tencor Corp. (United States)
Dongsub Choi, KLA-Tencor (Korea, Republic of)
Michael Ferber, KLA-Tencor (Germany)
Klaus-Dieter Roeth, KLA-Tencor (Germany)
ByoungHoon Lee, SK Hynix, Inc. (Korea, Republic of)
Inhwan Lee, SK Hynix, Inc. (Korea, Republic of)

Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)

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