Share Email Print

Proceedings Paper

Investigation of coat-develop track system for EUV resist processing
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

EUV lithography (EUVL) is the leading candidate for the manufacture of devices with 1× nm node and beyond. However, many challenges remain for the industry to understand clearly and to overcome before EUVL will be ready for application in volume production. Efforts have been made to improve the various critical components of EUVL, such as light source, exposure tool, mask, resist material, and so on.[1,2] Among these, resist materials are considered as one of the most critical issues in realizing EUVL.[3,4] Coat-develop track system overcame several challenges for each traditional resist system (i.e. i-line, KrF ArF, and ArF immersion). EUV resist system requires ultra thin organic film coating.[5] The under-layer thickness is below 10nm and the resist thickness is about 40nm, however, in some cases film thickness is smaller than the diameter of particles on the substrate, even if the particle size is smaller than the detection limit of defect inspection tool. Also EUV resist patterning becomes extremely small pattern pitch. It leads the difficulty of CD control because the resist solubility in develop processing depends on resist type. Some resists were significantly swelled during develop process. Swelling depends on develop time and developer materials. That behavior on EUV resist system is becoming evident.[6] Furthermore, LWR improvement on track processing is required. During the conference, we will discuss how to coat the substrate with ultra thin film and how to control resist dissolution to improve CD uniformity and LWR. Additionally, we will show the latest lithographic results obtained with the novel application for EUV coat-develop track system.

Paper Details

Date Published: 1 April 2013
PDF: 9 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792W (1 April 2013); doi: 10.1117/12.2011354
Show Author Affiliations
Masahiko Harumoto, SOKUDO Co. Ltd. (Japan)
Osamu Tamada, SOKUDO Co. Ltd. (Japan)
Tadashi Miyagi, SOKUDO Co. Ltd. (Japan)
Koji Kaneyama, SOKUDO Co. Ltd. (Japan)
Akihiko Morita, SOKUDO Co. Ltd. (Japan)
Charles Pieczulewski, SOKUDO Co. Ltd. (Japan)
Masaya Asai, SOKUDO Co. Ltd. (Japan)

Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?