Source mask optimization (SMO) is widely used to make state-of-the-art semiconductor devices in high volume manufacturing. To realize mature SMO solutions in production, the Intelligent Illuminator, which is an illumination system on Nikon scanner, is useful because it can provide generation of freeform sources with high fidelity to the target. Proteus SMO, which employs co-optimization method and an insertion of validation with mask 3D effect and resist properties for an accurate prediction of wafer printing, can take into account the properties of Intelligent Illuminator. We investigate an impact of the source properties on the SMO to pattern of a static-random access memory. Quality of a source made on the scanner compared to the SMO target is evaluated with in-situ measurement and aerial image simulation using its measurement data. Furthermore we discuss an evaluation of a universality of the source to use it in multiple scanners with a validation with estimated value of scanner errors.

Date Published: 12 April 2013
PDF: 12 pages
Proc. SPIE 8683, Optical Microlithography XXVI, 86830M (12 April 2013); doi: 10.1117/12.2011353

Published in SPIE Proceedings Vol. 8683:
Optical Microlithography XXVI
Will Conley, Editor(s)