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Proceedings Paper

Sub-14 nm HSQ line patterning by e-beam dose proximity effect correction assisted with designed line CD/pitch split
Author(s): Wei-Su Chen; Chu-Ya Yang; Chiung Yu Lo; Hung-Wen Wei; Frederick T. Chen; Tzu-Kun Ku
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Paper Abstract

New applications on memory and logic devices need to form line shape pattern below 20 nm. Most of the prior articles for studying HSQ line CD resolution applied hot or cold (non-room temperature (RT)) development, salty development, KOH-based development or high concentration TMAH developer (like 25%) to push CD resolution to below 10 nm but these methods are not standard IC process compatible with 2.38% TMAH development at RT. E-beam lithography processes are applied to investigate CD resolution on RRAM film stacking of TiN/Ti/HfOx with or without proximity effect correction (PEC). Both dose and shape (line CD and pitch) modulations are applied in this study to obtain finest line width resolution using IC process compatible 2.38% TMAH developer at RT. Experimental results are summarized below. Lowest base dose of HSQ for pattern to be resolvable is larger than 1,000 (μC/cm2). Smallest line CD of 13.1 nm for designed CD of 5 nm (G4) is resolved to 2 separate lines on R1st dense-line pattern with e-beam dose of 5,000 (μC/cm2) assisted by dose PEC. Two lines of R1st dense-pattern is merged to single line of 14.7 nm at 10,000 (μC/cm2). 2lines dense-line pattern is clearly resolved to 2 separate lines at 1,500 (μC/cm2) but merged to one line at 2,000 (μC/cm2). Iso-line on the right of two dense-lines of 2lines pattern contributes backscattered dose which increases the line width. 5lines dense-line pattern could only resolve to 18.3 nm. Iso-line R1st_1L is resolvable to 18.5 nm with uniform distribution of CD across the line and 13.6 nm is also resolved with more rough line edge. In summary, sub-14 nm line width of HSQ could be resolved by the combination of e-beam dose and shape modulations using standard 2.38% TAMH developer. This process is suitable for applications using metal oxide films.

Paper Details

Date Published: 29 March 2013
PDF: 12 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 868211 (29 March 2013); doi: 10.1117/12.2010364
Show Author Affiliations
Wei-Su Chen, Industrial Technology Research Institute (Taiwan)
Chu-Ya Yang, BASF Electronic Materials Taiwan Ltd. (Taiwan)
Chiung Yu Lo, Industrial Technology Research Institute (Taiwan)
Hung-Wen Wei, Industrial Technology Research Institute (Taiwan)
Frederick T. Chen, Industrial Technology Research Institute (Taiwan)
Tzu-Kun Ku, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

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