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Proceedings Paper

Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates
Author(s): D. J. Rogers; P. Bove; F. Hosseini Teherani; K. Pantzas; T. Moudakir; G. Orsal; G. Patriarche; S. Gautier; A. Ougazzaden; V. E. Sandana; R. McClintock; M. Razeghi
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Paper Abstract

InGaN-based p-i-n structures were transferred from sapphire to soda-lime glass substrates using two approaches: (1) laser-lift-off (LLO) and thermo-metallic bonding and (2) chemical lift-off (LLO) by means sacrificial ZnO templates and direct wafer bonding. Both processes were found to function at RT and allow reclaim of the expensive single crystal substrate. Both approaches have also already been demonstrated to work for the wafer-scale transfer of III/V semiconductors. Compared with the industry-standard LLO, the CLO offers the added advantages of a lattice match to InGaN with higher indium contents, no need for an interfacial adhesive layer (which facilitates electrical, optical and thermal coupling), no damaged/contaminated GaN surface layer, simplified sapphire reclaim (GaN residue after LLO may complicate reclaim) and cost savings linked to elimination of the expensive LLO process.

Paper Details

Date Published: 18 March 2013
PDF: 6 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862611 (18 March 2013); doi: 10.1117/12.2010046
Show Author Affiliations
D. J. Rogers, Nanovation (France)
P. Bove, Nanovation (France)
F. Hosseini Teherani, Nanovation (France)
K. Pantzas, Georgia Tech-Lorraine, CNRS (France)
T. Moudakir, Georgia Tech-Lorraine, CNRS (France)
G. Orsal, LMOPS, CNRS (France)
G. Patriarche, Lab. de Photonique et de Nanostructures, CNRS (France)
S. Gautier, Northwestern Univ. (United States)
A. Ougazzaden, Georgia Tech-Lorraine, CNRS (France)
V. E. Sandana, Graphos (France)
R. McClintock, Northwestern Univ. (United States)
M. Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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