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Proceedings Paper

Optimization of resist composition for the DESIRE process
Author(s): Bruno Roland; Ria Lombaerts; Jan Vandendriessche; Francoise Godts
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Paper Abstract

The quality of resist profiles obtained In surface Imaging techniques based on selective diffusion of a silylating agent and subsequent dry development depends on the sificon distribution after silylatlon and the quality of the transfer of this silicon image during dry development. Ideally, the silicon distribution at the pattern edge should show a very abrupt change from low to high silicon incorporation. This so called "silicon contrast" depends upon the composition of the resist materials and the silylatlon conditions. In this paper, we will describe the effect of resist parameters such as sensitiser type and concentration, resin type, molecular weight, molecular weight distribution and hydroxyl group content of the resin on the lithographic characteristics of the resist materials In the DESIRE process.

Paper Details

Date Published: 1 June 1990
PDF: 10 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20098
Show Author Affiliations
Bruno Roland, UCB Electronics (Belgium)
Ria Lombaerts, UCB Electronics (Belgium)
Jan Vandendriessche, UCB Electronics (United States)
Francoise Godts, UCB Electronics (Belgium)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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