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Proceedings Paper

Silylation of poly (t-BOC) styrene resists: performance and mechanisms
Author(s): Chris A. Spence; Scott A. MacDonald; Hubert Schlosser
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Paper Abstract

The rate and selectivity of silicon uptake during the silylation of resists consisting of styrene/ para-(t-BOC)- styrene copolymer resins and tri-phenyl sulfonium hexa-fluom-arsenate (onium salt) photosensitizer has been studied. VFIR spectroscopy has been used to monitor the extent of the deprotection reaction that occurs during baking and the silicon uptake during silylation. It has been found that for the co-polymers, silicon diffusion is rapid, and the silicon uptake is directly related to the number of phenolic sites created during the post-exposure (jwesilylation) bake.

Paper Details

Date Published: 1 June 1990
PDF: 14 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20097
Show Author Affiliations
Chris A. Spence, Univ. of California/Berkeley (United States)
Scott A. MacDonald, IBM/Almaden Research Ctr. (United States)
Hubert Schlosser, IBM/Almaden Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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