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Proceedings Paper

Characterization of dry developed processes using silylation application to the PRIME process
Author(s): Christophe Pierrat; Hubert Bono; Francoise Vinet; Thierry Mourier; Michele Chevallier; Jean Charles Guibert
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Paper Abstract

A new positive working system for deep UV lithography, called PRIME (Positive Resist IMage by dry Etching) using silylation and dry development was proposed1. This system is derived from photolithographic DESIRE process. In order to better understand mechanisms involved in the PRIME process, different characterization experiments were carried out. For this purpose an experimental silylation module was built. This module includes an in-situ silylation detection based on resist reflectivity variations during wafers treatment. Reflectivity variations are due to index variation and swelling of the silylated resist. This feature ensures not only a better reproductibiity but also the measurement of kinetics and thermodynamics parameters. In a second part, results obtained with PRIME in deep UV lithography will be discussed. At 248 nm with a mask aligner, 0.2 jun L/S patterns were resolved in 0.7 j.un thick resist. Moreover these patterns were transfered in 0.6 im thick silicon dioxide and 0.3 pm polysilicon. A resolution of 0.25 im lines and spaces in 1.1 jim thick resist was achieved with ASM PAS 5000-70 deep UV stepper *.

Paper Details

Date Published: 1 June 1990
PDF: 14 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20095
Show Author Affiliations
Christophe Pierrat, LETI/CENG (United States)
Hubert Bono, LETI/CENG (France)
Francoise Vinet, LETI/CENG (France)
Thierry Mourier, LETI/CENG (France)
Michele Chevallier, LETI/CENG (France)
Jean Charles Guibert, LETI/CENG (France)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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