Proceedings Paper
Integrated high speed hybrid silicon transmitter| Format | Member Price | Non-Member Price |
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Paper Abstract
We review recent progress made on the hybrid silicon platform towards realizing an integrated high speed WDM
transmitter on silicon. Using ion implantation enhanced quantum well intermixing, four band gaps are integrated on a
single chip and used to demonstrate a DFB laser array operating over 200 nm from 1250 to 1450 nm. Results from an
independent effort to improve on hybrid silicon EA modulator performance are also described. Together these
demonstrations pave the way to realize a terabit transmitter on silicon.
Paper Details
Date Published: 27 February 2013
PDF: 9 pages
Proc. SPIE 8630, Optoelectronic Interconnects XIII, 863016 (27 February 2013); doi: 10.1117/12.2009454
Published in SPIE Proceedings Vol. 8630:
Optoelectronic Interconnects XIII
Alexei L. Glebov; Ray T. Chen, Editor(s)
PDF: 9 pages
Proc. SPIE 8630, Optoelectronic Interconnects XIII, 863016 (27 February 2013); doi: 10.1117/12.2009454
Show Author Affiliations
Siddharth R. Jain, Univ. of California, Santa Barbara (United States)
Yongbo Tang, Univ. of California, Santa Barbara (United States)
Sudharsanan Srinivasan, Univ. of California, Santa Barbara (United States)
Yongbo Tang, Univ. of California, Santa Barbara (United States)
Sudharsanan Srinivasan, Univ. of California, Santa Barbara (United States)
Martijn J. R. Heck, Univ. of California, Santa Barbara (United States)
John E. Bowers, Univ. of California, Santa Barbara (United States)
John E. Bowers, Univ. of California, Santa Barbara (United States)
Published in SPIE Proceedings Vol. 8630:
Optoelectronic Interconnects XIII
Alexei L. Glebov; Ray T. Chen, Editor(s)
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