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Proceedings Paper

Exciton structure of absorption and magneto-absorption spectra near type I-type II transition in the strained heterostructures
Author(s): Ruben P. Seisyan; Alexey V. Kavokin; S. I. Kokhanovskii; A. I. Nesvizhskii; M. E. Sasin; Victor M. Ustinov
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Paper Abstract

Magnetooptical study of the mixed type I-type II quantum well heterostructures (In,Ga)As/GaAs is presented, where a type I potential is realized for a heavy hole exciton and a type II quantum well takes place for a light hole exciton. The oscillatory structure of magnetoabsorption spectra allowed to restore the `fan diagrams' for HH1E1 and LH1E1 transitions taking into account the exciton binding energies calculated variationally. Thus, cyclotron masses of carriers were extracted for quantum wells with different content of Indium. An additional transition split-up from LH1E1 state is found in the spectra and interpreted as electron-third oscillatory hole state n equals 2 (LH3E1) exciton resonance. The self-consistent variational solution of the excitonic problem in a structure under study shows that in a weak type II potential LH1E1 and LH3E1 excitons remain spatially direct both having substantial oscillator strength. The splitting of 8 meV between these two states at zero magnetic field is in excellent agreement with experiment. We found that the electron Coulomb potential effect on a hole confinement results in an increase of LH3E1 exciton oscillator strength during type I-type II transitions, so that an appearance of a doublet structure in light hole exciton spectrum and substantial oscillator strength of light hole excitons is a signature of combined shallow type II quantum well and Coulomb potential.

Paper Details

Date Published: 9 February 1995
PDF: 9 pages
Proc. SPIE 2362, International Conference on Excitonic Processes in Condensed Matter, (9 February 1995); doi: 10.1117/12.200941
Show Author Affiliations
Ruben P. Seisyan, A.F. Ioffe Physical Technical Institute (Russia)
Alexey V. Kavokin, A.F. Ioffe Physical Technical Institute (Russia)
S. I. Kokhanovskii, A.F. Ioffe Physical Technical Institute (Russia)
A. I. Nesvizhskii, A.F. Ioffe Physical Technical Institute (Russia)
M. E. Sasin, A.F. Ioffe Physical Technical Institute (Russia)
Victor M. Ustinov, A.F. Ioffe Physical Technical Institute (Russia)

Published in SPIE Proceedings Vol. 2362:
International Conference on Excitonic Processes in Condensed Matter
Jai Singh, Editor(s)

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