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Proceedings Paper

Dopant profiles in heavily doped ZnO
Author(s): B. Claflin; K. D. Leedy; D. C. Look
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Paper Abstract

X-ray photoelectron spectroscopy (XPS) is used to compare the composition as a function of depth of as-grown ZnO films heavily doped with Ga and similar samples annealed in air for 10 min. at 600 °C, with particular attention given to the near-surface region. These films were grown by pulsed laser deposition (PLD) using a ZnO target containing 3 wt% Ga2O3. The electrical properties of these samples were determined from temperature-dependent Hall-effect measurements. The as-grown film has the following characteristics: i) a ~1:1 Zn:O ratio with a Ga concentration of ~ 3.3 atomic percent; ii) no excess Ga in the near-surface region; and iii) excellent electrical characteristics: ρ=2.42×10-4 Ω-cm, n=8.05×1020 cm-3, and μ=32.1 cm2/V-s at 300 K. For the annealed sample: i) the Zn:O ratio remains ~ 1:1, but the Ga concentration is ~ 3 atomic percent which is ~10% lower than in the as-grown film; ii) ~7 at% Ga is measured in the near-surface region; and iii) a significant increase in resistivity to ρ = 0.99 Ω-cm, n = 1.97×1018 cm-3, and μ=3.2 cm2/V-s at 300 K. Analysis of the O chemical shift suggests formation of a mixed ZnO/Ga2O3 surface layer ≤ 5 nm thick accounts for the observed changes in the Ga profile after annealing.

Paper Details

Date Published: 18 March 2013
PDF: 8 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862606 (18 March 2013); doi: 10.1117/12.2009394
Show Author Affiliations
B. Claflin, Air Force Research Lab. (United States)
K. D. Leedy, Air Force Research Lab. (United States)
D. C. Look, Air Force Research Lab. (United States)
Wright State Univ. (United States)
Wyle Labs., Inc. (United States)

Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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