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Evaluation of methods to improve EUV OPC model accuracy
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Paper Abstract

Several methods are evaluated to improve the accuracy of extreme ultraviolet (EUV) lithography OPC models by including additional physical effects which are not commonly used in deep ultraviolet (DUV) OPC. The primary additions to the model in this work are model based corrections for flare and two different corrections for mask shadowing effects, commonly referred to as HV bias. The quantitative, incremental, improvement from each of these additions is reported, and the resulting changes in tape-out flow and OPC runtime are discussed

Paper Details

Date Published: 1 April 2013
PDF: 13 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86790V (1 April 2013); doi: 10.1117/12.2009281
Show Author Affiliations
Tamer H.. Coskun, GLOBALFOUNDRIES Inc. (United States)
Chris Clifford, GLOBALFOUNDRIES Inc. (United States)
Germain Fenger, GLOBALFOUNDRIES Inc. (United States)
Gek Soon Chua, GLOBALFOUNDRIES Singapore (Singapore)
Keith Standiford, GLOBALFOUNDRIES Inc. (United States)
Ralph Schlief, GLOBALFOUNDRIES Inc. (United States)
Craig Higgins, GLOBALFOUNDRIES Inc. (United States)
Yi Zou, GLOBALFOUNDRIES Inc. (United States)

Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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