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Proceedings Paper

Interactions of 3D mask effects and NA in EUV lithography
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Paper Abstract

With high NA (>0.33), and the associated higher angles of incidence on the reflective EUV mask, mask induced effects will significantly impact the overall scanner-performance. We discuss the expected effects in detail, in particular paying attention to the interaction between reflective coating and absorber on the mask, and show that there is a trade-off between image quality and mask efficiency. We show that by adjusting the demagnification of the lithography system one can recover both image quality and mask efficiency.

Paper Details

Date Published: 8 November 2012
PDF: 12 pages
Proc. SPIE 8522, Photomask Technology 2012, 852211 (8 November 2012); doi: 10.1117/12.2009117
Show Author Affiliations
Jens Timo Neumann, Carl Zeiss SMT GmbH (Germany)
Paul Gräupner, Carl Zeiss SMT GmbH (Germany)
Winfried Kaiser, Carl Zeiss SMT GmbH (Germany)
Reiner Garreis, Carl Zeiss SMT GmbH (Germany)
Bernd Geh, Carl Zeiss SMT Inc. (United States)

Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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