
Proceedings Paper
Investigation of the exposure and bake of a positive acting resist with chemical amplificationFormat | Member Price | Non-Member Price |
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Paper Abstract
The exposure and post-exposure bake of a chemical amplification resist that relies on the acid catalyzed removal
of a tert-butyloxycarbonyl (t-BOC) group have been investigated. The effects of the acid generator on the production
of acid during exposure and the extent of deprotection during the bake were examined by using different
weight percent mixtures of both a 2,6 dinitrobenzyl tosylate and a triarylsulfonium salt. The generation of acid
was monitored by measuring the resist transmission during exposure. The decrease during exposure of the nitro
group absorbance at 1540 cm' In the FFIR spectrum of the tosylate was correlated with the transmission measurements.
The experimental results were used to determine absorption coefficients and acid generation rate constants
for both acid generators. The extent of deprotection that occurred during the bake was determined by monitoring
the characteristic FTIR absorbance band at 1760 cm1 over a range of exposure doses, bake temperatures, and bake
times. The extent of deprotection was related to the local acid concentration generated during exposure through
chemical reaction kinetics. The model for the resist with the tosylate consisted of a primary deprotection reaction
where the rate of deprotection was proportional to the acid concentration to the mth power (m > 1). For the resist
with the onium salt, an additional acid loss reaction was required to account for saturation of the deprotection
reaction with increasing bake time. The resist with the onium salt was less sensitive to the bake conditions in comparison
to the resist with the tosylate. Improved resist performance during the bake was obtained when using
higher loadings of both the tosylate and the onium salt acid generators.
Paper Details
Date Published: 1 June 1990
PDF: 13 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20086
Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)
PDF: 13 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20086
Show Author Affiliations
Richard A. Ferguson, Univ. of California/Berkeley (United States)
Chris A. Spence, Univ. of California/Berkeley (United States)
Elsa Reichmanis, AT&T Bell Labs. (United States)
Chris A. Spence, Univ. of California/Berkeley (United States)
Elsa Reichmanis, AT&T Bell Labs. (United States)
Larry F. Thompson, AT&T Bell Labs. (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)
Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)
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