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Proceedings Paper

InGaAsP optical device integration on SOI platform by Ar/O2 plasma assisted bonding
Author(s): A. Higo; L. Li; E. Higurashi; M. Sugiyama; Y. Nakano
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Paper Abstract

The hetero-integration of InGaAsP/InP on highly doped silicon micro wire structure for Si hybrid laser using the plasma assisted direct bonding has been carried out. For strong adhesion, bonding assisted pattern was used for the silicon wire to the InGaAsP/InP layers. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAsP layers are measured and compared to the Si/InP bulk bonding. The improvement of the heterointegration with long time annealing was also discussed and realized the direct current injection from Si wire platforms to compound semiconductor active layer for silicon hybrid laser.

Paper Details

Date Published: 13 March 2013
PDF: 6 pages
Proc. SPIE 8616, MOEMS and Miniaturized Systems XII, 86160X (13 March 2013); doi: 10.1117/12.2008337
Show Author Affiliations
A. Higo, Tohoku Univ. (Japan)
L. Li, The Univ. of Tokyo (Japan)
E. Higurashi, The Univ. of Tokyo (Japan)
M. Sugiyama, The Univ. of Tokyo (Japan)
Y. Nakano, The Univ. of Tokyo (Japan)

Published in SPIE Proceedings Vol. 8616:
MOEMS and Miniaturized Systems XII
Wibool Piyawattanametha; Yong-Hwa Park, Editor(s)

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