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Proceedings Paper

Analysis of metal-metal contacts in RF MEMS switches
Author(s): Steffen Kurth; Sven Voigt; Sven Haas; Andreas Bertz; Christian Kaufmann; Thomas Gessner; Akira Akiba; Koichi Ikeda
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Paper Abstract

This contribution reports on the analysis of metal-metal contacts of MEMS switches. A novel high aspect ratio MEMS fabrication sequence in combination with wafer level packaging is applied for fabrication of an RF MEMS switch with lateral motion. It allows for a relatively large actuation electrode area in a small package, and for high actuation force even with an actuation voltage of 5 V. The focus of this contribution is on the contact behavior. It is shown how operation conditions as like as actuation voltage, RF power, and DC bias influence the contact resistance. The power handling capability and its influence on the contacts, and the intermodulation were investigated also.

Paper Details

Date Published: 9 March 2013
PDF: 12 pages
Proc. SPIE 8614, Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII, 861403 (9 March 2013); doi: 10.1117/12.2004775
Show Author Affiliations
Steffen Kurth, Fraunhofer-Institut für Elektronische Nanosysteme (Germany)
Sven Voigt, Technische Univ. Chemnitz (Germany)
Sven Haas, Technische Univ. Chemnitz (Germany)
Andreas Bertz, Technische Univ. Chemnitz (Germany)
Christian Kaufmann, Technische Univ. Chemnitz (Germany)
Thomas Gessner, Fraunhofer-Institut für Elektronische Nanosysteme (Germany)
Akira Akiba, Sony Corp. (Japan)
Koichi Ikeda, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 8614:
Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII
Rajeshuni Ramesham; Herbert R. Shea, Editor(s)

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