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Proceedings Paper

Gain-switched single-pass Cr:ZnSe amplifier
Author(s): Sean A. McDaniel; Patrick A. Berry; Kenneth L. Schepler
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Paper Abstract

In this paper, we report on building and testing a Cr:ZnSe gain-switched amplifier pumped by a Q-switched Ho:YAG laser and seeded by a continuous wave (CW) tunable Cr:ZnSe laser. A 0.5%-doped, Brewster-cut Ho:YAG rod in an actively Q-switched, folded cavity produced 250 μJ pump pulses at 2.09 μm with pulse widths on the order of 400 ns. The seeded single-pass Cr:ZnSe amplifier exhibited output pulse energy as high as 3.8 μJ at 2.45 μm while pumped at a 10 kHz repetition rate. The gain-switched process showed a peak gain of 380 and an extraction efficiency of 1.5%. The system was tunable from 2160 nm to 2560 nm and had gain of 200 over a 400 nm range.

Paper Details

Date Published: 26 March 2013
PDF: 8 pages
Proc. SPIE 8599, Solid State Lasers XXII: Technology and Devices, 85990D (26 March 2013); doi: 10.1117/12.2004753
Show Author Affiliations
Sean A. McDaniel, Scientific Applications International Corp. (United States)
Patrick A. Berry, Air Force Research Lab. (United States)
Kenneth L. Schepler, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 8599:
Solid State Lasers XXII: Technology and Devices
W. Andrew Clarkson; Ramesh Shori, Editor(s)

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