We present the realization of high electron mobility transistors on GaN-heterostructures usable for mixing and rectification in the THz range. Device fabrication is fully compatible with industrial processes employed for millimetre wave integrated circuits. On-chip, integrated, polarization-sensitive, planar antennas were designed to allow selective coupling of THz radiation to the three terminals of field effect transistors in order to explore different mixing schemes for frequencies well above the cutoff frequency for amplification. The polarization dependence of the spectral response in the 0.18-0.40 THz range clearly demonstrated the possible use as integrated heterodyne mixers.

Date Published: 27 March 2013
PDF: 9 pages
Proc. SPIE 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 862416 (27 March 2013); doi: 10.1117/12.2004087

Published in SPIE Proceedings Vol. 8624:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI
Laurence P. Sadwick; Créidhe M. O'Sullivan, Editor(s)