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Proceedings Paper

UV-enhanced silicon avalanche photodiodes
Author(s): Richard A. Myers; Richard Farrell; Suzannah L. Riccardi; Mickel McClish
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Paper Abstract

Silicon avalanche photodiodes (APDs) fabricated through a deep diffusion process underwent a modified surface treatment in an attempt to improve their response in the ultraviolet region of the optical spectrum. After adjusting the doping profile in the near-surface region of the detectors, APDs were fabricated and tested at several wavelengths from ultraviolet to the near-infrared. At the target wavelength of 355 nm, the detector bandwidth was increased by a factor of 20 over devices fabricated without the modified surface treatment. Modest improvements in the internal quantum efficiency were also measured. Most importantly, the modified detectors maintained the high gain and low noise performance specifications that are hallmarks of traditional deep diffusion APDs.

Paper Details

Date Published: 11 March 2013
PDF: 11 pages
Proc. SPIE 8621, Optical Components and Materials X, 86211H (11 March 2013); doi: 10.1117/12.2003993
Show Author Affiliations
Richard A. Myers, Radiation Monitoring Devices, Inc. (United States)
Richard Farrell, Radiation Monitoring Devices, Inc. (United States)
Suzannah L. Riccardi, Radiation Monitoring Devices, Inc. (United States)
Mickel McClish, Radiation Monitoring Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 8621:
Optical Components and Materials X
Michel J. F. Digonnet; Shibin Jiang; J. Christopher Dries, Editor(s)

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