
Proceedings Paper
Growth of high indium InGaN films using a combined deposition technique and its application for long wavelength emitterFormat | Member Price | Non-Member Price |
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Paper Abstract
High indium content InGaN films were grown on sapphire substrate using low temperature pulsed laser deposition (PLD)
with nitrogen plasma and a specific target. The controllable target consists of two separate sections: an indium sheet with
periodic rectangular-holes and a standard GaN wafer. By changing the rectangular-hole area, a modulated indium vapor
was excited by pulsed laser and introduced into the InGaN deposition reaction, contributing the increase in the
incorporation of indium into the InGaN film. The structural and optical stability of the 33 and 60% indium InGaN
revealed no differences in the line-shape and peak position even after annealing at 800°C for 75 min from x-ray
diffraction and luminescence results. Moreover, such high thermal stability of 60% InGaN film was put in metal organic
chemical vapor deposition (MOCVD) to regrow GaN layer, the peak position of 860 nm remained unchanged after
MOCVD regrowth. The flat and uniform of regrown sample indicates that the PLD method used in this study is indeed
promising for the development long wavelength of high indium content InGaN emitters.
Paper Details
Date Published: 4 March 2013
PDF: 9 pages
Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 864118 (4 March 2013); doi: 10.1117/12.2003725
Published in SPIE Proceedings Vol. 8641:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)
PDF: 9 pages
Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 864118 (4 March 2013); doi: 10.1117/12.2003725
Show Author Affiliations
Kun-Ching Shen, National Chung Hsing Univ. (Taiwan)
Ming-Chien Jiang, National Chung Hsing Univ. (Taiwan)
Tzu-Yu Wang, National Chung Hsing Univ. (Taiwan)
Ming-Chien Jiang, National Chung Hsing Univ. (Taiwan)
Tzu-Yu Wang, National Chung Hsing Univ. (Taiwan)
Ray-Hua Horng, National Chung Hsing Univ. (Taiwan)
Dong-Sing Wuu, National Chung Hsing Univ. (Taiwan)
Da-Yeh Univ. (Taiwan)
Dong-Sing Wuu, National Chung Hsing Univ. (Taiwan)
Da-Yeh Univ. (Taiwan)
Published in SPIE Proceedings Vol. 8641:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)
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