The bandgap control of doped-ZnO nanowires is important for tunable light emitting diodes (LEDs). Ultraviolet (UV), blue and violet LED structures based on Ag-doped ZnO /p-GaN and Cd-alloyed ZnO (Zn_1-xCd_xO) nanorods/p-GaN heterojunction have been fabricated by epitaxial electrodeposition at low temperatures and thermal annealing. UV electroluminescence (EL) peak around 397 nm observed from pure nanowires-ZnO/p-GaN at room temperature was shifted to 406 nm or 423 nm by using heterojunction between Ag-doped ZnO (ZnO:Ag) and Zn_1-xCd_xO-nanorods grown on p-GaN substrate, respectively. The electroluminescence emission threshold voltage was low at about 5.0 V and EL intensity increased with rise in the applied voltage bias. Presented experimental results demonstrate the tunable emission from silver and cadmium-doping in ZnO-based nanoLEDs.

Date Published: 18 March 2013
PDF: 4 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261N (18 March 2013); doi: 10.1117/12.2003474

Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)