
Proceedings Paper
Extremely temperature-insensitive continuous-wave broadband quantum cascade lasersFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
Quantum cascade (QC) lasers are promising light sources for many chemical sensing applications in the mid-infrared
spectral range. For industrial applications, broadband wavelength tuning of external-cavity QC lasers with very broad
gain-width has been demonstrated. QC lasers based on anti-crossed dual-upper-state (DAU) designs are one of the
promising candidates because of its broad bandwidth as well as high device performances. In fact, wide wavelength
tuning of external cavity QC lasers with the anti-crossed DAU designs has been exhibited in several wavelengths: the
tuning range of ~25% in pulsed mode and <17% in cw mode at room temperature. Here we report conspicuous
temperature performances of continuous wave quantum cascade lasers with broad gain bandwidths. The lasers with the
anti-crossed DAU designs, characterized by strong super-linear current-light output curves, exhibit the extremely high
characteristic temperature for threshold current density, T0~750 K above room temperature. In addition, its slope
efficiency is growing with increasing temperature (negative T1-value). For the pulsed operation of a short 1 mm length
laser, the temperature coefficient reaches the surprisingly high value of 1085 K over 340-380 K temperature range. The
distinctive characteristics of the DAU lasers are attributable to the optical absorption quenching which has been clarified
to take place in indirect pumped QC lasers. Such high characteristic temperatures of the DAU-QC lasers provide great
advantages for practical applications, in addition to its potential of broadband tuning.
Paper Details
Date Published: 4 March 2013
PDF: 9 pages
Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86400R (4 March 2013); doi: 10.1117/12.2003241
Published in SPIE Proceedings Vol. 8640:
Novel In-Plane Semiconductor Lasers XII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)
PDF: 9 pages
Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86400R (4 March 2013); doi: 10.1117/12.2003241
Show Author Affiliations
Kazuue Fujita, Hamamatsu Photonics K.K. (Japan)
Masamichi Yamanishi, Hamamatsu Photonics K.K. (Japan)
Shinichi Furuta, Hamamatsu Photonics K.K. (Japan)
Masamichi Yamanishi, Hamamatsu Photonics K.K. (Japan)
Shinichi Furuta, Hamamatsu Photonics K.K. (Japan)
Tatsuo Dougakiuchi, Hamamatsu Photonics K.K. (Japan)
Atsushi Sugiyama, Hamamatsu Photonics K.K. (Japan)
Tadataka Edamura, Hamamatsu Photonics K.K. (Japan)
Atsushi Sugiyama, Hamamatsu Photonics K.K. (Japan)
Tadataka Edamura, Hamamatsu Photonics K.K. (Japan)
Published in SPIE Proceedings Vol. 8640:
Novel In-Plane Semiconductor Lasers XII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)
© SPIE. Terms of Use
