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Proceedings Paper

Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD
Author(s): Yueh-Lin Lee; Jia-Hao Chuang; Tzu-Hsuan Huang; Chong-Long Ho; Meng-Chyi Wu
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Paper Abstract

Transparent conducting oxides have been widely employed in optoelectronic devices using the various deposition methods such as sputtering, thermal evaporator, and e-gun evaporator technologies.1-3 In this work, gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates via H2O-thermal atomic layer deposition (ALD) at different deposition temperatures. ALD-GZO thin films were constituted as a layer-by-layer structure by stacking zinc oxides and gallium oxides. Diethylzinc (DEZ), triethylgallium (TEG) and H2O were used as zinc, gallium precursors and oxygen source, respectively. Furthermore, we investigated the influences of O2 plasma post-treatment power on the surface morphology, electrical and optical property of ZnO:Ga films. As the result of O2 plasma post-treatment, the characteristics of ZnO:Ga films exhibit a smooth surface, low resistivity, high carrier concentration, and high optical transmittance in the visible spectrum. However, the transmittance decreases with O2 plasma power in the near- and mid-infrared regions.

Paper Details

Date Published: 18 March 2013
PDF: 11 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261K (18 March 2013); doi: 10.1117/12.2003029
Show Author Affiliations
Yueh-Lin Lee, National Tsing Hua Univ. (Taiwan)
Jia-Hao Chuang, National Tsing Hua Univ. (Taiwan)
Tzu-Hsuan Huang, National Tsing Hua Univ. (Taiwan)
Chong-Long Ho, National Tsing Hua Univ. (Taiwan)
Meng-Chyi Wu, National Tsing Hua Univ. (Taiwan)

Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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