Proceedings Paper
High current generation in dilute nitride solar cells grown by molecular beam epitaxy| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
We review our recent work concerning the development of dilute nitride solar cells by molecular beam epitaxy. This
epitaxial technology enables a high level of control of the growth conditions and alleviates known issues related to
epitaxy of dilute nitrides ultimately enabling to achieve high quality materials suitable for solar cell developments. In
particular, we focus on discussing the mechanisms linking the epitaxial and annealing conditions to the operation of
dilute nitride solar cells. We also report operation of a single junction dilute nitride solar cell with a short circuit current
density as high as ~39 mA/cm2 under 1 sun illumination.
Paper Details
Date Published: 25 March 2013
PDF: 6 pages
Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201I (25 March 2013); doi: 10.1117/12.2002972
Published in SPIE Proceedings Vol. 8620:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
Alexandre Freundlich; Jean-Francois Guillemoles, Editor(s)
PDF: 6 pages
Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201I (25 March 2013); doi: 10.1117/12.2002972
Show Author Affiliations
A. Aho, Tampere Univ. of Technology (Finland)
A. Tukiainen, Tampere Univ. of Technology (Finland)
V. Polojärvi, Tampere Univ. of Technology (Finland)
A. Tukiainen, Tampere Univ. of Technology (Finland)
V. Polojärvi, Tampere Univ. of Technology (Finland)
Published in SPIE Proceedings Vol. 8620:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
Alexandre Freundlich; Jean-Francois Guillemoles, Editor(s)
© SPIE. Terms of Use
