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Proceedings Paper

On the origin of strain relaxation in epitaxial CdZnO layers
Author(s): A. Redondo-Cubero; J. Rodrigues; M. Brandt; P. Schäfer; F. Henneberger; M. R. Correia; T. Monteiro; E. Alves; K. Lorenz
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Paper Abstract

The origin of a double peak, detected by X-ray diffraction (XRD), in a wurtzite CdxZn1-xO (x=0.17) epilayer, is investigated using Rutherford backscattering spectrometry in channeling geometry (RBS/C). In-depth compositional characterization by RBS/C demonstrates that strain relaxation does not take place via compositional phase separation and does not cause any compositional pulling effects. On the contrary, RBS/C angular scans demonstrate that relaxation is a consequence of progressive structural changes during the heteroepitaxial growth of the film on MgZnO, likely due to the large distortion of the lattice induced by the high Cd content.

Paper Details

Date Published: 18 March 2013
PDF: 7 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86260N (18 March 2013); doi: 10.1117/12.2002969
Show Author Affiliations
A. Redondo-Cubero, Univ. Técnica de Lisboa (Portugal)
Univ. de Lisboa (Portugal)
J. Rodrigues, Univ. de Aveiro (Portugal)
M. Brandt, Humboldt-Univ. zu Berlin (Germany)
Aalto Univ. (Finland)
P. Schäfer, Humboldt-Univ. zu Berlin (Germany)
F. Henneberger, Humboldt-Univ. zu Berlin (Germany)
M. R. Correia, Univ. de Aveiro (Portugal)
T. Monteiro, Univ. de Aveiro (Portugal)
E. Alves, Univ. Técnica de Lisboa (Portugal)
Univ. de Lisboa (Portugal)
K. Lorenz, Univ. Técnica de Lisboa (Portugal)
Univ. de Lisboa (Portugal)

Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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