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Proceedings Paper

Defects study of MOCVD grown β-Ga2O3 films
Author(s): Parvaneh Ravadgar; Ray-Hua Horng; Li-Wei Tu; Sin-Liang Ou; Hui-Ping Pan; Shu-De Yao
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Paper Abstract

Highly (-201) oriented β-Ga2O3 films prepared by metal-organic chemical vapor deposition on (0001) sapphire substrates, undergone different post annealing temperatures to study their resistivity under harsh environment. Both of Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy (TEM) results are exposing a harmony between oxygen vacancies and gallium interstitials. TEM characterization of samples determines a relationship between interstitials and formation of screw dislocations. Cathodoluminecsnece investigated under different applied voltages is found to be applicable to study chemistry of the bulk and surface of β-Ga2O3.

Paper Details

Date Published: 18 March 2013
PDF: 8 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261B (18 March 2013); doi: 10.1117/12.2002913
Show Author Affiliations
Parvaneh Ravadgar, National Cheng Kung Univ. (Taiwan)
Ray-Hua Horng, National Cheng Kung Univ. (Taiwan)
National Chung Hsing Univ. (Taiwan)
Li-Wei Tu, National Sun Yat-Sen Univ. (Taiwan)
Sin-Liang Ou, National Chung Hsing Univ. (Taiwan)
Hui-Ping Pan, Peking Univ. (China)
Shu-De Yao, Peking Univ. (China)

Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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