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Proceedings Paper

A hybrid CMOS inverter made of ink-jet printed n-channel inorganic and p-channel organic thin film transistors
Author(s): X. L. Nan; Y. Wang; H. T. Dai; S. G. Wang; J. L. Zhao; X. W. Sun
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Paper Abstract

In this paper, a hybrid CMOS inverter employing In-Ga-Zn oxide (IGZO) (inorganic, n-channel) and P3HT (organic, p-channel) thin film transistors (TFTs) is reported. Both inorganic and organic TFTs are fabricated by ink-jet printing technology. The field effect mobility of p and n channel TFTs are 0.0038 and 0.27 cm2/V s, respectively. The inverter exhibited an obvious inverter response for switching between logic ‘1’ and logic ‘0’, and yielded a high gain of 14 at VDD = 30 V. With the combining advantages of oxide semiconductor (n-type, high mobility) and organic (commonly p-type), it is promising to construct powerful functional CMOS circuits, such as ring oscillator and shift registers.

Paper Details

Date Published: 18 March 2013
PDF: 5 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261I (18 March 2013); doi: 10.1117/12.2002894
Show Author Affiliations
X. L. Nan, Tianjin Univ. (China)
Y. Wang, Singapore Univ. of Technology & Design (Singapore)
H. T. Dai, Tianjin Univ. (China)
S. G. Wang, Tianjin Univ. (China)
J. L. Zhao, Tianjin Univ. (China)
X. W. Sun, South Univ. of Science and Technology of China (China)

Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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