Proceedings Paper
A hybrid CMOS inverter made of ink-jet printed n-channel inorganic and p-channel organic thin film transistors| Format | Member Price | Non-Member Price |
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Paper Abstract
In this paper, a hybrid CMOS inverter employing In-Ga-Zn oxide (IGZO) (inorganic, n-channel) and P3HT (organic, p-channel) thin film transistors (TFTs) is reported. Both inorganic and organic TFTs are fabricated by ink-jet printing technology. The field effect mobility of p and n channel TFTs are 0.0038 and 0.27 cm2/V s, respectively. The inverter exhibited an obvious inverter response for switching between logic ‘1’ and logic ‘0’, and yielded a high gain of 14 at VDD = 30 V. With the combining advantages of oxide semiconductor (n-type, high mobility) and organic (commonly p-type), it is promising to construct powerful functional CMOS circuits, such as ring oscillator and shift registers.
Paper Details
Date Published: 18 March 2013
PDF: 5 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261I (18 March 2013); doi: 10.1117/12.2002894
Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)
PDF: 5 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261I (18 March 2013); doi: 10.1117/12.2002894
Show Author Affiliations
Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)
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