Silicon nanophotonic platform based on a silicon-on-insulator substrate enables dense photonic integration due to transparency for light propagation and ultra-high refractive index contrast for light confinement. Here, we integrate silicon together with III-V for high-efficiency heterogeneous Silicon/III-V and short vertical optical interconnect access. The fabrication involves 3 critical processes: 1) obtaining more than 80% maximum bonded areas of Si with III-V, 2) precise alignment of III-V nano-devices on top of the passive devices and 3) vertical sidewall etch profile of Si and III-V devices. The measurement results show around 90% coupling efficiency. The realization of this heterogeneous Si/III-V integration platform will open up enormous opportunities for photonic system on silicon through integrating various devices.

Date Published: 6 March 2013
PDF: 5 pages
Proc. SPIE 8628, Optoelectronic Integrated Circuits XV, 86280M (6 March 2013); doi: 10.1117/12.2002786

Published in SPIE Proceedings Vol. 8628:
Optoelectronic Integrated Circuits XV
Louay A. Eldada; El-Hang Lee, Editor(s)