Proceedings Paper
Defects generation and annihilation in GaN grown on patterned silicon substrate| Format | Member Price | Non-Member Price |
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Paper Abstract
The behavior of threading dislocations and stacking faults were investigated in a (1-101) GaN grown on a patterned
(001)Si substrate by selective metal-organic-vapor-phase-epitaxy with an AlN buffer layer. Cross sectional transmission
electron microscopy images showed that threading dislocations are generated at the hetero-interface of GaN/AlN/Si
induced by misfit dislocations, while stacking faults are generated when two crystals with different crystal axes coalesce. We found some of them are annihilated making a loop, where two stacking faults have been generated at a short distance. This suggests a rout to decrease the density of stacking faults in III nitrides.
Paper Details
Date Published: 27 March 2013
PDF: 6 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250K (27 March 2013); doi: 10.1117/12.2002738
Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)
PDF: 6 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250K (27 March 2013); doi: 10.1117/12.2002738
Show Author Affiliations
N. Sawaki, Aichi Institute of Technology (Japan)
S. Ito, Aichi Institute of Technology (Japan)
T. Nakagita, Aichi Institute of Technology (Japan)
H. Iwata, Aichi Institute of Technology (Japan)
T. Tanikawa, Nagoya Univ. (Japan)
S. Ito, Aichi Institute of Technology (Japan)
T. Nakagita, Aichi Institute of Technology (Japan)
H. Iwata, Aichi Institute of Technology (Japan)
T. Tanikawa, Nagoya Univ. (Japan)
Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)
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