Proceedings Paper
The source of holes in p-type InxGa1-xN films| Format | Member Price | Non-Member Price |
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Paper Abstract
Mg-doped InxGa1-xN films are investigated using electron paramagnetic resonance (EPR) spectroscopy. Surprisingly, the number of EPR-detected Mg-related acceptors decreases as x increases from 0.021 to 0.112, but the hole density increases as expected. The observation is attributed to the loss of a magnetic resonance signal from Mg impurities in the vicinity of an In-induced perturbing field. Analysis shows that the number of Mg affected is greater than the amount predicted by considering only next nearest neighbors, but does not extend to all the Mg atoms. The results support the model in which In-induced potential fluctuations perturb the Mg dopant.
Paper Details
Date Published: 27 March 2013
PDF: 5 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250D (27 March 2013); doi: 10.1117/12.2002569
Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)
PDF: 5 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250D (27 March 2013); doi: 10.1117/12.2002569
Show Author Affiliations
M. E. Zvanut, Univ. of Alabama at Birmingham (United States)
W. R. Willoughby, Univ. of Alabama at Birmingham (United States)
W. R. Willoughby, Univ. of Alabama at Birmingham (United States)
D. D. Koleske, Sandia National Labs. (United States)
Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)
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