Highly brilliant diode lasers at 1120nm with a high optical output power, nearly diffraction limited beam and narrow spectral line width are increasingly important for non-linear frequency conversion to 560 nm. We present experimental results about edge-emitting distributed Bragg reflector (DBR) tapered diode lasers emitting at 1120 nm. The investigated lasers show an output power of up to 8W with a conversion efficiency of about 40%, and a lifetime of more than 5000 h at 5 W. The lasers also exhibit a small vertical divergence <15° full width at half maximum (FWHM), a nearly diffraction limited beam quality, and a narrow spectral line width with FWHM smaller than 10pm. These properties allow the lasers to be used for future second harmonic (SH) generation.

Date Published: 4 March 2013
PDF: 8 pages
Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86401J (4 March 2013); doi: 10.1117/12.2002487

Published in SPIE Proceedings Vol. 8640:
Novel In-Plane Semiconductor Lasers XII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)