
Proceedings Paper
Electrical injection schemes for nanolasersFormat | Member Price | Non-Member Price |
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Paper Abstract
The performance of injection schemes among recently demonstrated electrically pumped photonic crystal nanolasers has
been investigated numerically. The computation has been carried out at room temperature using a commercial
semiconductor simulation software. For the simulations two electrical injection schemes have been compared: vertical pi-
n junction through a current post structure as in1 and lateral p-i-n junction with either uniform material as in2 or with a
buried heterostructure (BH) as in3. To allow a direct comparison of the three schemes the same active material
composition consisting of 3 InGaAsP QWs on an InP substrate has been chosen for the modeling. In the simulations the
main focus is on the electrical and optical properties of the nanolasers i.e. electrical resistance, threshold voltage,
threshold current and wallplug efficiency. In the current flow evaluation the lowest threshold current has been achieved
with the lateral electrical injection through the BH; while the lowest resistance has been obtained from the current post
structure even though this model shows a higher current threshold because of the lack of carrier confinement. Final scope
of the simulations is the analyses of advantages and disadvantages of different electrical injection schemes for the
development of the optimal device design for the future generation of electrically pumped nanolasers for terabit
communication.
Paper Details
Date Published: 4 March 2013
PDF: 10 pages
Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86400Y (4 March 2013); doi: 10.1117/12.2002484
Published in SPIE Proceedings Vol. 8640:
Novel In-Plane Semiconductor Lasers XII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)
PDF: 10 pages
Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86400Y (4 March 2013); doi: 10.1117/12.2002484
Show Author Affiliations
K. Yvind, Technical Univ. of Denmark (Denmark)
Published in SPIE Proceedings Vol. 8640:
Novel In-Plane Semiconductor Lasers XII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)
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