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Proceedings Paper

Thin AlGaN cladding, blue-violet InGaN laser diode with plasmonic GaN substrate
Author(s): Szymon Stańczyk; Tomasz Czyszanowski; Robert Kucharski; Anna Kafar; Tadeusz Suski; Łucja Marona; Greg Targowski; Michał Boćkowski; Piotr Perlin
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Paper Abstract

We demonstrate the possibility of fabrication of InGaN laser diode with an extremely thin lower AlGaN cladding (200 nm) by using high electron concentration, plasmonic GaN substrate. The plasmonic substrates were fabricated by one of high-pressure methods – ammonothermal method or multi-feed-seed growth method and have an electron concentration from 5x1019 cm-3 up to 1x1020 cm-3. New plasmonic substrate devices, in spite of their extremely thin lower AlGaN cladding, showed identical properties to these manufactured with traditional, thick lower cladding design. They were characterized by identical threshold current density, slope efficiency and differential gain. Thin AlGaN devices are additionally characterized by low wafer bow and very low density of dislocations (<104 cm-2).

Paper Details

Date Published: 4 March 2013
PDF: 6 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862513 (4 March 2013); doi: 10.1117/12.2002440
Show Author Affiliations
Szymon Stańczyk, Institute of High Pressure Physics (Poland)
Tomasz Czyszanowski, Technical Univ. of Lodz (Poland)
Robert Kucharski, TopGaN Ltd. (Poland)
Anna Kafar, Institute of High Pressure Physics (Poland)
Tadeusz Suski, Institute of High Pressure Physics (Poland)
Łucja Marona, Institute of High Pressure Physics (Poland)
Greg Targowski, TopGaN Ltd. (Poland)
Michał Boćkowski, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Piotr Perlin, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)

Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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