We demonstrate the possibility of fabrication of InGaN laser diode with an extremely thin lower AlGaN cladding (200 nm) by using high electron concentration, plasmonic GaN substrate. The plasmonic substrates were fabricated by one of high-pressure methods – ammonothermal method or multi-feed-seed growth method and have an electron concentration from 5x10¹⁹ cm^-3 up to 1x10²⁰ cm^-3. New plasmonic substrate devices, in spite of their extremely thin lower AlGaN cladding, showed identical properties to these manufactured with traditional, thick lower cladding design. They were characterized by identical threshold current density, slope efficiency and differential gain. Thin AlGaN devices are additionally characterized by low wafer bow and very low density of dislocations (<10⁴ cm^-2).

Date Published: 4 March 2013
PDF: 6 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862513 (4 March 2013); doi: 10.1117/12.2002440

Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)