Proceedings Paper
High modal gain 1.5 µm InP based quantum dot lasers: dependence of static properties on the active layer design| Format | Member Price | Non-Member Price |
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Paper Abstract
Based on a novel quantum dot (QD) growth technique, high density dot-like QDs were grown on (100)InAlGaAs/InP surfaces, which resulted in a strongly improved modal gain in 1.55 μm QD lasers. The influence of the number of QD layers on static properties, e.g., modal gain, threshold current density and spectral properties, are presented and discussed. For a large number of QD layers, e.g., 6 QD layers, a high modal gain of > 70cm-1 could be obtained. By reducing the number of QD layers, i.e., lowering the modal gain, the wavelength shift with temperature can be reduced to < 0.2 nm/K. Systematic dependence of laser properties on structural parameters is observed.
Paper Details
Date Published: 5 March 2013
PDF: 6 pages
Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 864004 (5 March 2013); doi: 10.1117/12.2002420
Published in SPIE Proceedings Vol. 8640:
Novel In-Plane Semiconductor Lasers XII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)
PDF: 6 pages
Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 864004 (5 March 2013); doi: 10.1117/12.2002420
Show Author Affiliations
Johann Peter Reithmaier, Univ. Kassel (Germany)
Published in SPIE Proceedings Vol. 8640:
Novel In-Plane Semiconductor Lasers XII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)
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