In the present work, we have analyzed the optical parameters of the thin layers Ge, Ag, and Au prepared by lithography and used as front contact and absorber in the C-MOS device structure. The experimental data concern the reflectance R and transmittance T in the visible and near infrared region. The interpretation of these results are based on the method of analysis of R and T developed by Tomlin and on the Mueller numerical method of resolution of nonlinear equation give by Abelès[1] method. Thus we have chosen by comparing all method to use Lorenz-Mie theory diffusion [2]. The simulation results allow us to choose gold to realize our pattern.

Date Published: 19 February 2013
PDF: 9 pages
Proc. SPIE 8659, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, 86590R (19 February 2013); doi: 10.1117/12.2002332

Published in SPIE Proceedings Vol. 8659:
Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV
Ralf Widenhorn; Antoine Dupret, Editor(s)