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Proceedings Paper

Light extraction by Lambertian sources from light emitting diodes
Author(s): James R. Nagel
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Paper Abstract

Internal back-and-forth propagation of photons within a light emitting diode (LED) will naturally tend towards a Lambertian intensity profile when surface texturing is sufficiently rough. Novel designs in light extraction efficiency (LEE) can therefore benefit by optimizing under this expectation. This paper develops a framework for calculating LEE from a planar LED structure with textured surface features under the assumption of Lambertian intensity within the substrate. The method can estimate the total LEE value when given a substrate width w, an attenuation constant α, and the transmittance function T(θ,Φ) through the top interface. We demonstrate our theory on a pyramidal surface texture over a GaSb substrate at 4.5 μm wavelength by computing the expected LEE as a function of w.

Paper Details

Date Published: 14 March 2013
PDF: 9 pages
Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86190L (14 March 2013); doi: 10.1117/12.2002115
Show Author Affiliations
James R. Nagel, Terahertz Device Corp. (United States)

Published in SPIE Proceedings Vol. 8619:
Physics and Simulation of Optoelectronic Devices XXI
Bernd Witzigmann; Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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